Simulation on domain rotation path and magnetostriction of Terfenol-D alloy

J Mater Sci Technol ›› 2001, Vol. 17 ›› Issue (04): 473-475.

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Simulation on domain rotation path and magnetostriction of Terfenol-D alloy

Jiuchun YAN, Wenbo HAN, Xaoqiu XIE, Shiqin YANG

National Key Laboratory of Advanced Welding Production Technology, Department of Material Science and Engineering, Harbin Institute of Technology Harbin 150001, China

Received:2000-05-25 Revised:2000-06-26 Online:2001-07-28 Published:2009-10-10
Contact: Jiuchun YAN

Abstract

Abstract: Based on a simplified domain rotation model, the rotation path of internal domains and corresponding magnetostriction of [112], [111] oriented single Terfenol-D crystals under compressive prestresses have been simulated. Comparisons with results of experiment and other calculation have been made. Results of simulation showed that the [111] oriented single crystal has better low-field magnetostriction properties than the [112] oriented one. Under a compressive prestress of 10 MPa, up to 2300x10(-6) saturation magnetostriction of [111] oriented crystal has been obtained at 800 Oe, while for [112] oriented, 1600x10(-6) maximum magnetostriction has been reached at 1000 Oe.

Key words:

Jiuchun YAN, Wenbo HAN, Xaoqiu XIE, Shiqin YANG. Simulation on domain rotation path and magnetostriction of Terfenol-D alloy[J]. J Mater Sci Technol, 2001, 17(04): 473-475.

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Simulation on domain rotation path and magnetostriction of Terfenol-D alloy

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