Properties of reactive magnetron sputtered ITO films without in-situ substrate heating and post-deposition annealing

Abstract

Abstract: Indium tin oxide (ITO) films were prepared on polyester, Si and glass substrate with relatively high deposition rate of above 0.9 nm/s by DC reactive magnetron sputtering technique at the sputtering pressure of 0.06 Pa system, respectively. The dependence of resistivity on deposition parameters, such as deposition rate, target-to-substrate distance (TSD), oxygen flow rate and sputtering time (thickness), has been investigated, together with the structural and the optical properties. It was revealed that ail 110 films exhibited lattice expansion. The resistivity of ITO thin films shows significant substrate effect: much lower resistivity and broader process window have been reproducibly achieved for the deposition of ITO films onto polyester rather than those prepared on both Si and glass substrates. The films with resistivity of as low as 4.23 x 10(-4) R cm and average transmittance of similar to 78% at wavelength of 400 similar to 700 nm have been achieved for the films on polyester at room temperature.

Key words:

Meng CHEN, Xuedong BAI, Jun GONG, Chao SUN, Rongfang HUANG, Lishi WEN. Properties of reactive magnetron sputtered ITO films without in-situ substrate heating and post-deposition annealing[J]. J Mater Sci Technol, 2000, 16(03): 281-285.

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