High quality SiGe layer deposited by a new ultrahigh vacuum chemical vapor deposition system

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J Mater Sci Technol ›› 2000, Vol. 16 ›› Issue (01): 94-96.

• Research Articles • Previous Articles

High quality SiGe layer deposited by a new ultrahigh vacuum chemical vapor deposition system

Guangli LUO, Xiaofeng LIN, Peiyi CHEN, Peixin TSIAN

Institute of Microelectronics, Tsinghua University, Beijing 100084, China

Received:1999-01-18 Revised:1999-03-09 Online:2000-01-28 Published:2009-10-10
Contact: Guangli LUO

Abstract

Abstract: An ultrahigh vacuum chemical vapor deposition (UHV/CVD) system is developed and the details of its construction and operation are reported. Using high purity SiH4 and GeH4 reactant gases, the Si0.82Ge0.18 layer is deposited at 550 degrees C. With the measurements by double crystal X-ray diffraction (DCXRD), transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy (RBS) techniques, it is shown that the crystalline quality of the SiGe layer is good, and the underlying SiGe/Si heterointerface is sharply defined.

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Guangli LUO, Xiaofeng LIN, Peiyi CHEN, Peixin TSIAN. High quality SiGe layer deposited by a new ultrahigh vacuum chemical vapor deposition system[J]. J Mater Sci Technol, 2000, 16(01): 94-96.

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High quality SiGe layer deposited by a new ultrahigh vacuum chemical vapor deposition system

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