J Mater Sci Technol ›› 2005, Vol. 21 ›› Issue (06): 887-890.

• Research Articles • Previous Articles     Next Articles

Effect of Seed Layer on the Orientation of Zinc Oxide Film on Silicon Substrate

Mi XIAO, Makoto KUWABARA   

  1. School of Electronic Information Engineering, Tianjin University, Tianjin 300072, China
  • Received:2004-11-25 Revised:2005-04-15 Online:2005-11-28 Published:2009-10-10
  • Contact: Mi XIAO

Abstract: The effect of seed layer on the orientation of ZnO film was investigated. Before the preparation of ZnO film using sol-gel method, seed layer of ZnO was prepared in a similar way using the precursor at a rather low concentration. Experiments show that the existence of seed layer can improve the orientation of the finally prepared ZnO film, while baking temperature, baking time and precursor concentration all have effects on the final results.

Key words: ZnO film, Sol-gel, Seed layer