Effect of Co Ion Implantation on GMR of [NiFeCo(10 nm)/Ag(10 nm)]×20 Multilayer Film

J Mater Sci Technol ›› 2005, Vol. 21 ›› Issue (04): 593-598.

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Effect of Co Ion Implantation on GMR of [NiFeCo(10 nm)/Ag(10 nm)]×20 Multilayer Film

Yuding HE, Shejun HU, Jian LI, Guangrong XIE

College of Material and Energy, Guangdong University of Technology, Guangzhou 510643, China

Received:2004-04-30 Revised:2004-10-07 Online:2005-07-28 Published:2009-10-10
Contact: Yuding HE

Abstract

Abstract: The composition, phase structure and microstructure of the discontinuous multilayer film [NiFeCo(10 nm)/ Ag(10 nm)]×20 were investigated after Co ion implantation and annealing at 280, 320, 360 and 400℃, respectively. GMR (giant magnetoresistance) ratio of the film with/without Co ion implantation was measured. The results showed that Co ion implantation decreased the granule size of the annealed multilayer film, and increased Hc value and GMR ratio of the multilayer film. After annealing at 360℃, the multilayer film [NiFeCo(10 nm)/Ag(10 nm)]×20 with/without Co ion implantation both exhibited the highest GMR ratio of 12.4%/11% under 79.6 kA/m of applied saturation magnetic field.

Key words: Co ion implantation, Giant magnetoresistance (GMR), [NiFeCo(10 nm)/Ag(10 nm)]×20 multilayer film

Yuding HE, Shejun HU, Jian LI, Guangrong XIE. Effect of Co Ion Implantation on GMR of [NiFeCo(10 nm)/Ag(10 nm)]×20 Multilayer Film[J]. J Mater Sci Technol, 2005, 21(04): 593-598.

References

[1] S.Bae, J.LI, J.H.Judy and S.Zurn: Appl. Phys. Lett., 2000, 77, 3435.
[2] R.David, J.Ebert, G.Miehe, M.Nathqlie, K.Michael and S.Branko: Thin Solid Films, 2004, 460, 256.
[3] K.Wellock, J.Caro and B.J.Hickey: J. Maga. Mater., 1999, 198, 27.
[4] A.Siritaratiwat, E.W.Hill, I.Shutt, J.M.Fallon and P.J.Grundy: Sensors and Actuators A: Phys., 2000, 81, 40.
[5] G.R.Pattanaik, D.K.Pandya and S.C.Kashyap: Thin Solids Films, 2003, 433, 247.
[6] G.Nabiyouni, W.Schwarzacher, Z.Rolik and I.Bakonyi: J. Magn. Mater., 2002, 253, 77.
[7] J.M.Daughton: J. Magn. Mater., 1999, 192, 334.
[8] J.Daughton, J.Brown, E.Chen, R.Beech, A.Pohm and W.Kude: IEEE Trans. Magn., 1994, 30, 4608.
[9] C.Giebeler, D.J.Adelerhot, A.E.Vanzon and G.Schulz: Sensors and Actuators A: Phys., 2001, 91, 16.
[10] C.P.Treutler and R.B.Gmbh: Sensors and Actuators A: Phys., 2001, 91, 2.
[11] M.Angelakers, P.Poulopoulos, O.Valassiades, N.K.Flevaris, D.Niarchos and A.Nassiopoulou: Sensors and Actuators A: Phys., 2001, 91, 180.
[12] G.A.Prinz: Sci., 1998, 282, 1660.
[13] C.H.Tsang, R.E.Fantana, T.Lin, D.E.Heim, B.A.Gurney and M.L.Williams: IBM J. Res. Develop, 1998, 42, 103.
[14] T.Thio, S.A.Solin, J.W.Bennett, D.R.Hines, M.Kawano, N.Oda and M.Sano: J. Crystal Growth, 1998, 184-185, 1293.
[15] Yong WANG, Ming XU and Zhenhong MAI: Modern Phys. Lett., 2004, 18(9), 355.
[16] J.W.Egelhoff, P.J.Chen, C.J.Powell, R.D.Mcmichael and M.D.Stiles: Progress in Surface Science, 2001, 67, 355.
[17] Ming XU, Yong FAN, Guangming LUO and Zhenhong MAI: Phys. Lett. A, 2000, 272(4), 282.
[18] Yuding HE, Shejun HU, Jian LI and Guangrong XIE: J. Mater. Sci. Technol., 2004, 20(2), 179.
[19] P.M.Levy: Solid State Phys., 1994, 47, 367.
[20] W.H.Butler and X.G.Zhang: J. Magn. Mater., 1995, 151, 354.
[21] A.Vedyayev: Phys. Lett., 1994, A185, 117.

Effect of Co Ion Implantation on GMR of [NiFeCo(10 nm)/Ag(10 nm)]×20 Multilayer Film

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