[1] J.R.Jimenez, X.Xiao, J.C.Sturm and P.W.Pellegrini: Appl. Phys. Lett., 1995, 67, 506. [2] S.Crattopadhyay, L.K.Bera, C.K.Maiti, S.K.Ray, P.K.Bose, D.Dentel, L.Kubler and J.L.Bischoff: J. Mater. Sci., 1998, 9, 403. [3] T.L.Lin, J.S.Park, S.D.Gunapala, E.W.Jones, H.M.Del Castillo, M.M.Weeks and P.W.Pellegrini: IEEE. Electron. Device Letters, 1995, 16, 94. [4] K.L.Kavanagh, M.C.Reuter and R.M.Tromp: Journal of Crystal Growth, 1997, 173, 393. [5] H.Kawarada, M.Ishida, J.Nakanishi, I.Ohdomari and S.Horiuchi: Philosophical Magazine, 1986, A54, 729. [6] V.W.L.Chin, M.A.Green and J.W.V.Storey: Solid State Electronics, 1993, 36, 1107. [7] H.H.Guttler and J.H.Werner: Appl. Phys. Lett., 1990, 56, 1113. [8] J.H.Werner and H.H.Guttler: J. Appl. Phys., 1990, 69,1522. [9] E.C.W.Leung, P.Markiewicz and M.C.Goh: J. Vac. Sci. Technol., 1997, B15, 181. [10] M.F.Tabet and F.K.Urban: J. Vac. Sci. TechnoJ., 1997, B15, 800. |