Abstract: Pb(Zr0.52Ti0.48)O3 (PZT) thin films were deposited on Pt/Ti/SiO2/Si(001) by metal organic decomposition (MOD) at different annealing temperatures. D500 X-ray diffractometer and texture goniometer were used to analyze the crystalline phases and measure diffraction angles θ and their changes with different orientations Ψ, respectively. Based on the extended model, the residual stress in PZT thin films with sin2\it \Psi$ method was measured. The origin of residual stress was theoretically analyzed from the epitaxial stress, intrinsic stress, thermal stress, and transformation stress. For the validity to evaluate residual stress, the experimental results of the conventional and extended models and theoretical analysis were discussed. One can conclude that the theoretical results are closer to the experimental results evaluated by the extended model, and the residual compressive stress evaluated by the extended model is larger than that evaluated by the conventional model due to the consideration of the piezoelectric coupling effects.

Key words: Ferroelectric thin film, X-ray diffraction, sin2Ψ method, Residual stresses