Abstract: The recrystallization texture in grain oriented silicon steel sheets, which were annealed at different primary annealing temperatures with and without an electric field, was investigated. An automated electron backscattered diffraction (EBSD) technique was used to analyze the recrystallization texture. It was found that recovery and application of electric field in primary annealing lead to an increase of {001} component and a decrease of {111} component after annealing at 900℃. The development of recrystallization texture can be explained in terms of the effects of electric field and primary annealing temperature on recovery.

Key words: Recrystallization texture, Grain oriented silicon steel, Annealing, Electric field