J Mater Sci Technol ›› 2003, Vol. 19 ›› Issue (04): 368-370.

• Research Articles • Previous Articles     Next Articles

Deposition of Aluminium Oxide Films by Pulsed Reactive Sputtering

Xinhui MAO, Bingchu CAI, Maosong WU, Guoping CHEN   

  1. Key Laboratory for Thin Film and Microfabrication of Ministry of Education. Research Institute of Micro/Nanometer Science and Technology, Shanghai Jiao Tong University, Shanghai 200030, China...
  • Received:1900-01-01 Revised:1900-01-01 Online:2003-07-28 Published:2009-10-10
  • Contact: Guoping CHEN

Abstract: Pulsed reactive sputtering is a novel process used to deposit some compound films, which are not deposited by traditional D.C. reactive sputtering easily. In this paper some experimental results about the deposition of Al oxide films by pulsed reactive sputtering are presented. The hysteresis phenomenon of the sputtering voltage and deposition rate with the change of oxygen flow during sputtering process are discussed.

Key words: Aluminium oxide films, Pulsed reactive sputtering, Hysteresis