J Mater Sci Technol ›› 2004, Vol. 20 ›› Issue (05): 577-579.

• Research Articles • Previous Articles     Next Articles

A New hcp Phase Formed in the Ni-Nb System during Ion-beam-assisted Deposition

Bin ZHAO, Kuiwei GENG, Fei ZENG, Feng PAN   

  1. Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
  • Received:1900-01-01 Revised:1900-01-01 Online:2004-09-28 Published:2009-10-10
  • Contact: Feng PAN

Abstract: The Ni80Nb20 films were prepared by ion beam assisted deposition (IBAD) with various Ar+ ion energies. A phase evolution of fcc→amorphous→Ni+Nb→Ni+hcp was observed with the increasing of ion beam energy from 2 keV to 8 keV. When bombarded by Ar+ ions of 8 keV during deposition, a new crystalline phase with hcp structure was obtained, of which the lattice parameters are a=0.286 nm and c=0.483 nm, different from those of the similar A3B-type hcp phase previously reported. The experimental results were discussed in terms of thermodynamics and restricted kinetic conditions in the far-from-equilibrium process of IBAD. The formation of hcp phase may also be related to the valence electron effect.

Key words: Hcp phase, Ni-Nb, Ion beam assisted deposition, Thermodynamics, Valence electron effect