J Mater Sci Technol ›› 2003, Vol. 19 ›› Issue (Supl.): 29-31.

• Research Articles • Previous Articles     Next Articles

Molecular Dynamics Simulation of Gas Diffusion in B2O3 and SiC

Yajing YE, Litong ZHANG, Laifei CHENG, Yongdong XU   

  1. State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi’an Shanxi 710072, China
  • Received:1900-01-01 Revised:1900-01-01 Online:2003-12-28 Published:2009-10-10
  • Contact: Yajing YE

Abstract: Molecular dynamics simulation using a universal force field has been employed to determine the diffusion coefficients of O2 and Na2SO4 vapor into B2O3 and SiC from 700 K to 1273 K, respectively. Einstein diffusion was observed in a 250~300 ps simulation. The diffusion coefficient for the O2 range from about 9.279×10-9 cm2/s for B2O3 to 2.275×10-10 cm2/s for SiC at a loading of 32 molecules per simulation box, that for the Na2SO4 vapor range from about 9.888×10-7 cm2/s for B2O3 to 1.837×10-10 cm2/s for SiC at a loading of 8 molecules per simulation box. Environment properties of C/SiC composite will be increased via the B2O3 preventing the diffusion of O2 and Na2SO4 vapor into the pyrolytic interphase and carbon fibers.

Key words: Molecular dynamics, Diffusion coefficient, C/SiC composite, Environment properties