J Mater Sci Technol ›› 2003, Vol. 19 ›› Issue (04): 363-365.

• Research Articles • Previous Articles     Next Articles

Characterization of ZnO:Al Films Deposited on Organic Substrate by r.f. Magnetron Sputtering

Jin MA, Xiaotao HAO, Shiyong ZHANG, Honglei MA   

  1. School of Physics and Microelectronics, Institute of Optoelectronic Materials & Devices, Shandong University, Jinan 250100, China...
  • Received:1900-01-01 Revised:1900-01-01 Online:2003-07-28 Published:2009-10-10
  • Contact: Jin MA

Abstract: Transparent conducting Al-doped zinc oxide (ZnO:Al) films with good adhesion have been deposited on polyimide thin film substrates by r.f. magnetron sputtering technique at low substrate temperature (25~180℃). The structural, optical and electrical properties of the deposited films were investigated. High quality films with electrical resistivity as low as 8.5×10-4 w\c·cm and the average transmittance over 74% in the wavelength range of the visible spectrum have been obtained. The electron carrier concentrations are in the range from 2.9×1020 to 7.1×1020 cm-3 with mobilities from 4 to 8.8 cm2V-1s-1 The densities of the films are in the range from 4.58 to 5.16 g/cm-3.

Key words: Zinc oxide, Microstructure, Electrical and optical properties