[1] H.Watanabe: Jpn. J Appl. Phys., 1970, 9, 418. [2] H.Gopala Swamy and P.Ayarama Reddy: Semicond. Sci.Technol., 1990, 5, 980. [3] J.Ma and S.Y.Li: Thin Solid Films, 1994, 237, 16. [4] F.T.J.Smith: Appl. Phys. Lett., 1983, 43, 1108. [5] P.Souletie, S.Bethke, B.W.Wessels and H.Pan: J. Crystal Growth, 1988, 86, 248. [6] H.Nanto, T.Minami, S.Shooji and S.Takata: J. Appl. Phys.,1984, 55(4) , 1029. [7] D.H.Zhang and D.E.Brodie: Thin Solid Film, 1994, 251, 151. [8] M.J.Brett, R.R.Parsons: J. Vac. Sci. Technol., 1986, A4(3) ,423. [9] J.Ack.Nobbs and F.C.Gillespie: J Phys. Chem.Solids, 1970,31, 2353. [10] P.Sreedhara Reddy: Solid State Commun., 1991, 71(12) , 899. [11] A.F.Aktaruzzaman, G.L.Sharna and L.K.Malhotra: Thin Solid Films, 1990, 183, 67. [12] W.S.Lan and S.J.Fonash: J. Electron. Mater., 1987, 16, 141. [13] J.Ma, D.H.Zhang and J.Q.Zhao: Appl. Surf Sci., 1999, 151,239. [14] B.Callity: In Element of X-ray Diffaction, Addison-Wesley,London, UK, 1959, 99. |