J Mater Sci Technol ›› 2000, Vol. 16 ›› Issue (01): 73-75.

• Research Articles • Previous Articles     Next Articles

Effects of distribution of induced defects on positron diffusion

Xinzhang ZHOU, Jian JIANG, Chiwei LUNG   

  1. International Center for Materials Physics, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110015, China
  • Received:1998-10-30 Revised:1999-04-12 Online:2000-01-28 Published:2009-10-10
  • Contact: Chiwei LUNG

Abstract: The effects of distribution of induced defects on the positron diffusion was studied by using the point-source diffusion model and delta function method.

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