Abstract: Two-dimensional (2D) semiconductors have emerged as an ideal platform for fundamental research and a promising candidate beyond silicon materials in future transistors due to their ultrathin thickness and excellent electrical properties. However, the practical application of 2D semiconductors still faces significant challenges. The excellent interface quality of traditional silicon-based semiconductor devices is crucial for their outstanding performance, whereas the interface issues in 2D semiconductor/dielectric systems remain unresolved, resulting in device performance far below expectations. Therefore, further study of the interface in 2D semiconductor/dielectric systems and finding appropriate methods to quantify interface quality, as well as interface optimization strategies, are critical for driving the practical application of 2D semiconductors. In this review, we discuss the issues existing at the 2D semiconductor/dielectric interface, quantitative characterization methods and optimization strategies for interface quality. This includes comparing the advantages and disadvantages of traditional characterization methods for silicon-based semiconductors when applied to 2D semiconductors, as well as the development of strategies to improve interface quality and enhance the performance of 2D devices. Finally, in the outlook, we outline the development directions for improving the interface quality of 2D semiconductor/dielectric systems.

Key words: Two-dimensional material, Dielectrics, Interface trap density, Defect characterization, Interface optimization