Quantum transport in WSe2/SnSe2 tunneling field effect transistors with high-k gate dielectrics

doi:10.1016/j.jmst.2024.01.098

J. Mater. Sci. Technol. ›› 2024, Vol. 201: 149-156.DOI: 10.1016/j.jmst.2024.01.098

• Research Article • Previous Articles Next Articles

Quantum transport in WSe₂/SnSe₂ tunneling field effect transistors with high-k gate dielectrics

Hailing Guo^a, Zhaofu Zhang^{b, c,*}, Chen Shao^a, Wei Yu^a, Qingzhong Gui^a, Peng Liu^d, Hongxia Zhong^e, Ruyue Cao^f, John Robertson^a,f, Yuzheng Guo^a,*

^aSchool of Electrical Engineering and Automation, Wuhan University, Wuhan 430072, China;
^bThe Institute of Technological Sciences, Wuhan University, Wuhan 430072, China;
^cHubei Key Laboratory of Electronic Manufacturing and Packaging Integration, Wuhan University, Wuhan 430072, China;
^dGuangxi Power Grid Company Co., Ltd., Nanning 530023, China;
^eSchool of Mathematics and Physics, China University of Geosciences, Wuhan 430074, China;
^fDepartment of Engineering, University of Cambridge, Cambridge CB2 1PZ, United Kingdom

Received:2023-11-15 Revised:2023-12-18 Accepted:2024-01-07 Published:2024-12-01 Online:2024-04-06
Contact: * E-mail addresses: zhaofuzhang@whu.edu.cn (Z. Zhang), yguo@whu.edu.cn (Y. Guo) .

Abstract

Abstract: Combining two-dimensional materials and high-k gate dielectrics offers a promising way to enhance the device performance of tunneling field-effect transistor (TFET). In this work, the device performance of WSe₂/SnSe₂ TFET with various gate dielectric materials is investigated based on quantum transport simulation. Results show that TFETs with high-k gate dielectric materials exhibit improved on-off ratio and enhanced transconductance. The optimized WSe₂/SnSe₂ TFET with TiO₂ gate dielectrics achieves an on-state current of 1560 μA/μm and a subthreshold swing (SS) of 48 mV/dec. The utilization of high-k gate dielectric materials results in shorter tunneling length, higher transmission efficiency, and increased electron tunneling probability. The performance of the WSe₂/SnSe₂ TFET would be affected by the presence of the underlap region. Moreover, WSe₂/SnSe₂ TFETs with La₂O₃ dielectric can be scaled down to 3 nm while meeting high-performance (HP) device requirements according to the International Technology Roadmap for Semiconductors (ITRS). This research presents a practical solution for designing advanced logic devices in the sub-5 nm technology node.

Key words: Tunneling field-effect transistor, High-k gate dielectrics, Quantum transport calculation

Hailing Guo, Zhaofu Zhang, Chen Shao, Wei Yu, Qingzhong Gui, Peng Liu, Hongxia Zhong, Ruyue Cao, John Robertson, Yuzheng Guo. Quantum transport in WSe₂/SnSe₂ tunneling field effect transistors with high-k gate dielectrics[J]. J. Mater. Sci. Technol., 2024, 201: 149-156.

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Quantum transport in WSe₂/SnSe₂ tunneling field effect transistors with high-k gate dielectrics

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