J. Mater. Sci. Technol. ›› 2023, Vol. 159: 251-257.DOI: 10.1016/j.jmst.2023.03.032

• Research Article • Previous Articles    

Non-ultrawide bandgap CsPbBr3 nanosheet for sensitive deep ultraviolet photodetection

Chun-Yan Wua, Yu-Xuan Lea, Li-Yan Lianga, Jing-Yue Lia, Feng-Xia Lianga, Shi-Rong Chena,*, Xiao-Ping Yanga, Yu-Xue Zhoub, Lin-Bao Luoa,*   

  1. aSchool of Microelectronics, Hefei University of Technology, Hefei 230009, China;
    bCollege of Physical Science and Technology, Yangzhou University, Yangzhou 225002, China
  • Received:2023-02-12 Revised:2023-03-22 Accepted:2023-03-22 Published:2023-10-01 Online:2023-04-26
  • Contact: *E-mail addresses: . srchen@hfut.edu.cn (S.-R. Chen), luolb@hfut.edu.cn (L.-B. Luo)

Abstract: In this study, we report the fabrication of a sensitive deep ultraviolet (DUV) photodetector by using CsPbBr3 nanosheets synthesized through confined-space growth at room temperature. The peak photoresponse of the device upon illumination blueshifts with decreasing thickness and a 68 nm CsPbBr3 nanosheet based device displays a peak response to 265 nm illumination, showing responsivity and specific detectivity of 85 mA/W and 4.05 × 1011 Jones at 3 V bias, respectively. Theoretical simulation reveals that the blueshift is associated with the wavelength-dependent absorption coefficient of CsPbBr3 nanosheet: incident light with shorter wavelengths can be absorbed on the superficial surface, while long-wavelength light has a larger penetration depth, leading to dominant DUV absorption in thinner CsPbBr3 nanosheet. This work will shed light on the facile and cost-effective fabrication of DUV photodetectors from non-ultrawide bandgap (UWBG) all-inorganic perovskite materials.

Key words: Non-ultrawide bandgap semiconductors, CsPbBr3 nanosheet, Wavelength-dependent absorption coefficient, Sensitive DUV photodetector