J. Mater. Sci. Technol. ›› 2023, Vol. 151: 66-72.DOI: 10.1016/j.jmst.2022.12.021

• Research Article • Previous Articles     Next Articles

A simple Pb-doping to achieve bonding evolution, VSn and resonant level shifting for regulating thermoelectric transport behavior of SnTe

Xu-Ye Xina, Jun Maa, Hong-Quan Liua,*, Yi-Jie Gub,*, Yan-Fang Wangc, Hong-Zhi Cuia,*   

  1. aCollege of Materials Science and Engineering, Shandong University of Science and Technology, Qingdao 266590, China;
    bSchool of Mechanical-electronic and Vehicle Engineering, Weifang University, Weifang 261061, China;
    cSchool of Materials Science and Engineering, China University of Petroleum Huadong, Qingdao 266580, China
  • Received:2022-11-13 Revised:2022-12-21 Accepted:2022-12-21 Published:2023-07-10 Online:2023-02-09
  • Contact: * E-mail addresses: liuhq@sdust.edu.cn (H.-Q. Liu), guyijie@sdust.edu.cn (Y.-J. Gu),cuihongzhi@ouc.edu.cn (H.-Z. Cui).

Abstract: The intensification of energy crises and environmental pollution inspire researchers' attention to environment-friendly SnTe thermoelectric materials. In this work, we achieved a lower lattice thermal conductivity and optimized the power factor via the synergistic optimization of bonding characteristic, VSn, and resonant level for the SnTe system, respectively. Pb-introduction produces weak bonding strength, mass fluctuation, and stress distortion, which result in lower thermal conductivity. The lowest lattice thermal conductivity achieves 0.66 W m-1 K-1 at 773 K. Further introduced VSn relieves loss of electrical conductivity caused by Pb-introduction, and it also makes the bigger g(E) and up-shift of resonance level. The VSn, enhanced g(E), and resonant level make electrical conductivity and Seebeck coefficient enhance simultaneously. Finally, the further optimization of thermal and electronic transport performance contributes to a higher ZT value of ∼0.86 at 773 K in the Sn0.685Pb0.285In0.015Te0.7Se0.3 sample. The strategy of bonding characteristic, VSn, and resonant level synergistic engineering will be widely applicable to various TE systems for achieving better thermoelectric performance.

Key words: SnTe-based material, Low thermal conductivity, Projected crystal orbital hamiltonian populations, VSn, Resonant level