Enhanced ferroelectric polarization with less wake-up effect and improved endurance of Hf0.5Zr0.5O2 thin films by implementing W electrode

doi:10.1016/j.jmst.2021.07.016

Abstract

Abstract:

This paper reports the improvement of electrical, ferroelectric and endurance of Hf_0.5Zr_0.5O₂ (HZO) thin-film capacitors by implementing W electrode. The W/HZO/W capacitor shows excellent pristine 2P_r values of 45.1 μC/cm² at ±6 V, which are much higher than those of TiN/HZO/W (34.4 μC/cm²) and W/HZO/TiN (26.9 μC/cm²) capacitors. Notably, the maximum initial 2P_r value of W/HZO/W capacitor can reach as high as 57.9 μC/cm² at ±7.5 V. These strong ferroelectric polarization effects are ascribed to the W electrode with a fairly low thermal expansion coefficient which provides a larger in-plane tensile strain compared with TiN electrode, allowing for enhancement of o-phase formation. Moreover, the W/HZO/W capacitor also exhibits higher endurance, smaller wake-up effect (10.1%) and superior fatigue properties up to 1.5 × 10¹⁰cycles compared to the TiN/HZO/W and W/HZO/TiN capacitors. Such improvements of W/HZO/W capacitor are mainly due to the decreased leakage current by more than an order of magnitude compared to the W/HZO/TiN capacitor. These results demonstrate that capping electrode material plays an important role in the enhancement of o-phase formation, reduces oxygen vacancies, mitigates wake-up effect and improves reliability.

Key words: Hf_0.5Zr_0.5O₂ films, Ferroelectric polarization, Endurance properties, Thermal expansion coefficient, W electrode

Dao Wang, Yan Zhang, Jiali Wang, Chunlai Luo, Ming Li, Wentao Shuai, Ruiqiang Tao, Zhen Fan, Deyang Chen, Min Zeng, Jiyan Y. Dai, Xubing B. Lu, J.-M. Liu. Enhanced ferroelectric polarization with less wake-up effect and improved endurance of Hf_0.5Zr_0.5O₂ thin films by implementing W electrode[J]. J. Mater. Sci. Technol., 2022, 104: 1-7.

Figures/Tables 5

Fig. 1. (a) Process flow for the fabrication of three kinds of capacitors. Cross-sectional HRTEM images of (b) WW and (c) WT capacitors.

Fig. 2. (a) GIXRD patterns of three types of capacitors. (b) Evolution of o-/t-peak position of HZO films with respect to the top and bottom electrodes. (c) Deconvolution of GIXRD spectra for WW capacitor. (d) Variation of the relative phase ratio of the three capacitors.

Fig. 3. Pristine P-V hysteresis loops of (a) WW, (b) TW and (c) WT capacitors. Comparison in (d) Ps, (e) 2Pr and (f) 2Vc between WW, TW and WT capacitors. (g) Pristine PUND loops and (h) initial J-V curves of three capacitors.

Fig. 4. The evolution of (a-c) P-V and (d-f) corresponding Is-V hysteresis loops of three capacitors subjected to 1 kHz triangle wave bipolar switching cycles with an amplitude of ±3 V. (g-i) The change of εr-V curves of all the capacitors with an increase in the number of electrical switching cycles, respectively. The capacitance-voltage measurements were performed at the DC bias amplitude of ±3 V and frequency of 1.0 MHz. Summary of the normalized Δ2Pr/2Pr, initial (j), leakage current density (k) and permittivity (l) of three capacitors as a function of the number of bipolar switching cycles.

Fig. 5. (a) Endurance properties of the WW, TW and WT capacitors. Endurance characteristics with changing the voltage (b) and the frequency (c) for WW, TW and WT capacitors. (d) Retention data by extrapolating the normalized polarization versus log (time) of WW, TW, and WT capacitors.

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Enhanced ferroelectric polarization with less wake-up effect and improved endurance of Hf_0.5Zr_0.5O₂ thin films by implementing W electrode

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