Magnetic and magnetotransport properties of single-crystalline R2PdGe6 (R = Pr, Gd and Tb)

doi:10.1016/j.jmst.2018.11.010

Abstract

Abstract:

Single crystals of R₂PdGe₆ (R = Pr, Gd and Tb) compounds were grown by the Bi-flux method. Pr₂PdGe₆ is an antiferromagnetic compound with Néel temperature T_N = 15 K, in which a field-induced magnetic transition (spin flip) occurs when a magnetic field is applied along either a or b axis; a small magnetization and hysteresis loop were observed when a field is applied along c axis. Gd₂PdGe₆ is a collinear antiferromagnetic compound with T_N = 37 K along b axis. Tb₂PdGe₆ is an antiferromagnetic compound with T_N = 48 K and its hard magnetization direction is along b axis. The temperature dependences of the resistance of the entire three compounds present inflection points at the respective T_N. A large resistance (as well as magnetoresistance) change can be found at the spin flip transition of Pr₂PdGe₆, but the change is not obvious at the spin flop transition of Gd₂PdGe₆.

Key words: R₂PdGe₆, Single crystal, Magnetic properties

Lei Zhang, Weijun Ren, Xiaohua Luo, Zhidong Zhang. Magnetic and magnetotransport properties of single-crystalline R₂PdGe₆ (R = Pr, Gd and Tb)[J]. J. Mater. Sci. Technol., 2019, 35(5): 764-768.

Figures/Tables 7

Fig. 1 (a) Structural sketch of R2PdGe6, microscopic photos of (b) Pr2PdGe6, (c) Gd2PdGe6, (d) Tb2PdGe6, and refinement of powder XRD patterns at room temperature of (e) Pr2PdGe6, (f) Gd2PdGe6 and (g) Tb2PdGe6.

Table 1 Lattice parameters, typical composition, and the quality factors of Rietveld refinement of R2PdGe6 (R = Pr, Gd and Tb; a, b, c: lattice constants; At: atomic fraction; Rp: profile factor; Rwp: weighted profile factor; χ2: reduced chi-square).

	Pr₂PdGe₆	Gd₂PdGe₆	Tb₂PdGe₆
a (nm)	0.41526	0.41076	0.40766
b (nm)	0.40734	0.40365	0.40196
c (nm)	2.1992	2.1676	2.1516
A_t (at.%)	Pr_22.60Pd_12.09Ge_65.31	Gd_22.91Pd_12.06Ge_65.03	Tb_23.16Pd_14.95Ge_61.89
R_p	10.77%	10.69%	11.71%
R_wp	14.89%	14.49%	16.13%
χ²	4.997	6.037	0.968

Fig. 2 (a) Temperature dependences of magnetization of Pr2PdGe6 crystal in magnetic field H?=?100?Oe applied along different crystallographic axes (the inset shows the enlarge figure for H//a) and (b) magnetic-field dependences of magnetization M at 2?K of Pr2PdGe6 crystal for H along different crystallographic axes (the inset shows the hysteresis loop at 2?K of Pr2PdGe6 for H//c).

Fig. 3 (a) Temperature dependences of magnetization of Gd2PdGe6 crystal in magnetic field H?=?100?Oe applied along different crystallographic axes and (b) magnetic-field dependences of magnetization at 2?K of Gd2PdGe6 crystal for H along different crystallographic axes.

Fig. 4 (a) Temperature dependences of magnetization of Tb2PdGe6 crystal in magnetic field H?=?100?Oe applied along different crystallographic axes and (b) magnetic-field dependences of magnetization at 2?K of Tb2PdGe6 crystal for H along different crystallographic axes.

Fig. 5 Normalized Resistance R/R2K of single crystalline R2PdGe6, I//[100] for Pr2PdGe6 and Gd2PdGe6, and I//[110] for Tb2PdGe6.

Fig. 6 MR of R2PdGe6 at 2?K: (a) Pr2PdGe6 for I//a, H//b and H//c; (b) Gd2PdGe6 for I//a, H//b and H//c; (c) Tb2PdGe6 for I//[110], H// [11ˉ0] and H//c.

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Magnetic and magnetotransport properties of single-crystalline R₂PdGe₆ (R = Pr, Gd and Tb)

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