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Structure and Electrical Characteristics of Zinc Oxide Thin Films Grown on Si (111) by Metal-organic Chemical Vapor Deposition

Yunfeng Wu1,2), Dongping Liu1,2), Naisen Yu2), Yuanda Liu1), Hongwei Liang1), Guotong Du1)   

  1. 1) School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China
    2) School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600, China
  • Received:2012-12-03 Revised:2013-01-25 Online:2013-09-30 Published:2013-08-22
  • Contact: Dongping Liu;Guotong Du
  • Supported by:

    National Natural Science Foundation of China (Nos. 11175038 and 51102036) and the Fundamental Research Funds for the Central Universities (No. DC110314).

Abstract:

ZnO thin films were grown on Si (111) substrates by low-pressure metal-organic chemical vapor deposition. The crystal structures and electrical properties of as-grown sample were investigated by scanning electron microscopy (SEM) and conductive atomic force microscopy (C-AFM). It can be seen that with increasing growth temperature, the surface morphology of ZnO thin films changed from flake-like to cobblestones-like structure. The current maps were simultaneously recorded with the topography, which was gained by C-AFM contact mode. Conductivity for the off-axis facet planes presented on ZnO grains enhanced. Measurement results indicate that the off-axis facet planes were more electrically active than the c-plane of ZnO flakes or particles probably due to lower Schottky barrier height of the off-axis facet planes.

Key words: ZnO thin films, Metal-organic chemical vapor deposition, Conductive atomic force microscopy, Scanning electron microscopy