J Mater Sci Technol ›› 1995, Vol. 11 ›› Issue (5): 349-352.

• Articles • Previous Articles     Next Articles

Fluence Dependence of Mean Sputter Depth for Bombarded Pt-Cu and ~(10)B-~(11)B Binary Materials

Liping ZHENG(Shanghai Institute of Nuclear Research, Chinese Academy of Sciences, Shanghai 201800, China)(To whom correspondence should be addressed)Risheng LI(Laboratory of Atomic Imaging of Solids, Institute of Metal Research,Chinese Academy of Sciences   

  • Received:1995-09-28 Revised:1995-09-28 Online:1995-09-28 Published:2009-10-10

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Abstract: The mean sputter depth depends on the surface composition gradient during ion implantation.For the high fluence ion implantation into a Pt-Cu alloy, the surface composition gradient of Cu is so large that the difference in mean sputter depth between Pt and Cu, is significant. However, for the high fluence ion implantation into 10B-11B isotope mixture, the surface composition gradient of 10B is so small that the difference in mean sputter depth between 10B and 11B is insignificant.

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