J Mater Sci Technol ›› 1998, Vol. 14 ›› Issue (1): 25-28.

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N1s Electron Binding Energies of CN_x Thin Films Grown by Magnetron Sputtering at Different Temperature

Weitao ZHENG; Kezhao XING; N.Hellgren; I.Ivanov; WS.Salaneck and J.-E.Sundgren (Dept. of Physics, Linkoping University, S-581 83 Linkoping, Sweden)(Present address: Dept. of Materials Science, Jilin University Changchun 130023, China)   

  • Received:1998-01-28 Revised:1998-01-28 Online:1998-01-28 Published:2009-10-10

Abstract: Carbon nitride thin films deposited using dc unbalanced magnetron sputtering system have been analyzed by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FT1R) and Raman spectroscopy. The XPS data show that N1s binding states depend on substrate temperature Ts, in which the peak at 400.0 eV increases with Ts, whereas the peak at 398.3 eV decreases with Ts slightly On the basis of XPS, FT1R and Raman spectra, the assignment of N1s electron binding energies was made. The peak at 400.0 eV is attributed to N atoms bonded to sp2 coordinated C atoms. The peak at 398.3 eV is attributed to N atoms bonded to sp3 coordinated C atoms as well as N C bonds.