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Synthesis and Characterization of Indium Niobium Oxide Thin Films via Sol-Gel Spin Coating Method
Saeed Mohammadi1), Mohammad Reza Golobostanfard1), Hossein Abdizadeh1,2)
1) School of Metallurgy and Materials Engineering, College of Engineering, University of Tehran, P.O. Box 11155-4563, Tehran, Iran
2) Center of Excellence for High Performance Materials, University of Tehran, P.O. Box 11155-4563, Tehran, Iran
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In the present study, niobium-doped indium oxide thin films were prepared by sol–gel spin coating technique. The effects of different Nb-doping contents on structural, morphological, optical, and electrical properties of the films were characterized by means of X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), UV–Vis spectroscopy, and four point probe methods. XRD analysis confirmed the formation of cubic bixbyite structure of In2O3 with a small shift in major peak position toward lower angles with addition of Nb. FESEM micrographs show that grain size decreased with increasing the Nb-doping content. Optical and electrical studies revealed that optimum opto-electronic properties, including minimum electrical resistivity of 119.4 × 10−3 Ω cm and an average optical transmittance of 85% in the visible region with a band gap of 3.37 eV were achieved for the films doped with Nb-doping content of 3 at.%. AFM studies show that addition of Nb at optimum content leads to the formation of compact films with smooth surface and less average roughness compared with the prepared In2O3 films.

Key wordsIndium oxide      Nb-doping      Solegel spin coating      Transparent conductive oxide      Opto-electronic properties     
Received: 29 January 2013      Published: 16 October 2013
Corresponding Authors: M. R. Golobostanfard     E-mail:

Cite this article:

Saeed Mohammadi, Mohammad Reza Golobostanfard, Hossein Abdizadeh. Synthesis and Characterization of Indium Niobium Oxide Thin Films via Sol-Gel Spin Coating Method. J. Mater. Sci. Technol., 2013, 29(10): 923-928.

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