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| Keywords | |
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Field emission |
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Large-area film |
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Molybdenum trioxide |
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Microstructures and synthesis |
| Authors | |
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BAN Dong-Mei |
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XU Ning-Sheng |
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DENG Shao-Zhi |
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CHEN Jun |
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SHE Jun-Cong |
| PubMed | |
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Article by Ban,D.M |
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Article by Xu,N.S |
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Article by Deng,S.Z |
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Article by Chen,j |
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Article by She,J.C |
Low-temperature Synthesis of Large-area Films of Molybdenum Trioxide Microbelts in Air and the Dependence of Their Field Emission Performance on Growth Conditions
Dongmei Ban, Ningsheng Xu, Shaozhi Deng, Jun Chen, Juncong She
State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China
A simple method is introduced for the preparation of large-area films of molybdenum trioxide (MoO3) microbelts. It is found that such films can be grown on indium tin oxide (ITO) glasses or silicon substrates at low temperatures by thermal evaporation deposition in air without using catalyst. Field emission measurements show that the turn-on field of the MoO3 microbelts is as low as 2.2 V/μm required to obtain a current density of 10 μA/cm2. The combination of the simplicity of the growth method and the attractive field emission performance makes it a potential low-cost technique for the preparation of large-area field emission cold cathode material.
the National Natural Science Foundation of China (Nos. U0634002, 50725206, 60571035 and 50672135), the National Basic Research Program of China (Nos. 2003CB314701, 2007CB935501 and 2008AA03A314), the Science and Technology Department of Guangdong Province, the Department of Information Industry of Guangdong Province, and the Science and Technology Department of Guangzhou City
| [1] | Y. Liu, Y. Qian, M. Zhang, Z. Chen and C. Wang: Mater. Res. Bull, 1996, 31, 1029. |
| [2] | Z. Hussain: J. Mater. Res, 2001, 16, 2695. |
| [3] | H.C. Zeng: Inorg. Chem, 1998, 37, 1967. |
| [4] | J.N. Yao, K. Hashimoto and A. Fujishima: Nature, 1992, 355, 624. |
| [5] | L. Margulis, G. Salitra, R. Tenne and M. Talianker: Nature, 1993, 365, 113. |
| [6] | O.M. Hussain and K.S. Rao: Mater. Chem. Phys, 2003, 80, 638. |
| [7] | M. Hersh¯nkel, L.A. Gheber, V. Volterra, J.L. Hutchison, L. Margulis and R. Tenne: J. Am. Chem. Soc, 1994, 116, 1914. |
| [8] | Y. Feldman, E. Wasserman, D.J. Srolovitz and R. Tenne: Science, 1995, 267, 222. |
| [9] | H.A. Therese, N. Zink, U. Kolb and W. Tremel: Solid State Sci, 2006, 8, 1133. |
| [10] | M. Afsharpour, A. Mahjoub and M.M. Amini: J. Inorg. Organomet. Polym, 2008, 18, 472. |
| [11] | G.D. Wei, W.P. Qin, D.S. Zhang, G.F. Wang, R.J. Kim, K.Z. Zheng and L.L. Wang: J. Alloy. Compd, 2009, 481, 417. |
| [12] | J. Zhou, S.Z. Deng, N.S. Xu, J. Chen and J.C. She: Appl. Phys. Lett, 2003, 83, 2653. |
| [13] | J. Zhou, N.S. Xu, S.Z. Deng, J. Chen, J.C. She and Z.L. Wang: Adv. Mater, 2003, 15, 1835. |
| [14] | Y.B. Li, Y. Bando, D. Golberg and K. Kurashima: Appl. Phys. Lett, 2002, 81, 5048. |
| [15] | X.S. Fang, Y. Bando, U.K. Gautam, C.H. Ye and D. Golberg: J. Mater. Chem, 2008, 18, 509. |
| [16] | J. Chen, X.H. Liang, S.Z. Deng and N.S. Xu: J. Vac. Sci. Technol. B, 2003, 21, 1727. |
| [17] | A. Agiral, A.W. Groenland, J.K. Chinthaginjala, K. Seshan, L. Le®erts and J.G.E.H. Gardeniers: J Phys. D-Appl. Phys, 2008, 41, 194009. |
| [18] | X.L. Li, J.F. Liu and Y.D. Li: Appl. Phys. Lett, 2002, 81, 4832. |
| [19] | L.F. Jiao, H.T. Yuan, Y.C. Si, Y.J. Wang, M. Zhao and Y.M. Wang: Mater. Lett, 2005, 59, 3112. |
| [20] | G.C. Li, L. Jiang, S.P. Pang, H.R. Peng and Z.K. Zhang: J. Phys. Chem. B, 2006, 110, 24472. |
| [21] | G. Wang, Y. Ji, L.H. Zhang, Y.M. Zhu, P.I. Gouma and M. Dudley: Chem. Mater, 2007, 19, 979. |
| [22] | L. Fang, Y.Y. Shu, A.Q. Wang and T. Zhang: J. Phys. Chem. C, 2007, 111, 2401. |