Properties of ZnO thin films grown on Si (100) substrates by pulsed laser deposition

J. Mater. Sci. Technol. ›› 2010, Vol. 26 ›› Issue (11): 973-976.

• Research Articles • 上一篇下一篇

Properties of ZnO thin films grown on Si (100) substrates by pulsed laser deposition

Young Rae Jang¹,Keon-Ho Yoo²,Seung Min Park¹

1. Kyung Hee University
2. Kyung Hee Unviersity

收稿日期:2009-09-17 修回日期:2010-02-11 出版日期:2010-11-30 发布日期:2010-11-22
通讯作者: Keon-Ho Yoo

Properties of ZnO Thin Films Grown on Si (100) Substrates by Pulsed Laser Deposition

Young Rae Jang¹⁾, Keon-Ho Yoo¹⁾, Seung Min Park²⁾

1) Department of Physics, Kyung Hee University, Seoul 130-701, Korea
2) Department of Chemistry, Kyung Hee University, Seoul 130-701, Korea

Received:2009-09-17 Revised:2010-02-11 Online:2010-11-30 Published:2010-11-22
Contact: Keon-Ho Yoo

摘要/Abstract

摘要： We grew ZnO thin films on Si (100) substrates by pulsed laser deposition using a ZnO target. The substrate temperature was varied in the range of room temperature to 800 ?C, and the oxygen partial pressure of 1 mTorr to 10 Torr. The properties of the resulting films were investigated by photoluminescence (PL), grazing incidence x-ray diffraction (GIXRD), x-ray photoelectron spectroscopy (XPS), and field emission scanning electron microscopy. Based on the ultraviolet (UV, ~380 nm) to visible emission ratio in the PL spectrum, the optimum growth conditions were determined to be 600 ?C and 1 Torr. The oxygen 1s peak in the XPS spectrum was decomposed into two peaks. The peak at lower binding energy increased in intensity with the oxygen partial pressure from 1 mTorr to 1 Torr while the other peak decreased. The GIXRD curve at the optimum condition showed strong two peaks (002) and (103). A strong correlation between the (103) peak intensity and the UV emission intensity was found.

关键词: Zinc Oxide, Pulsed laser deposition, Photoluminescence

Abstract: ZnO thin films were grown on Si (100) substrates by pulsed laser deposition using a ZnO target. The substrate temperature was varied in the range of room temperature to 800°C, and the oxygen partial pressure of 0.1333 Pa (1 mTorr) to 1333 Pa (10 Torr). The properties of the resulting films were investigated by photoluminescence (PL), grazing incidence X-ray diffraction (GIXRD), X-ray photoelectron spectroscopy (XPS), and field emission scanning electron microscopy (FESEM). Based on the ultraviolet (UV, ~ 380 nm) to visible emission ratio in the PL spectrum, the optimum growth conditions were determined to be 600°C and 133.3 Pa (1 Torr), respectively. The oxygen 1s peak in the XPS spectrum was decomposed into two peaks. The peak at lower binding energy increased in intensity with the oxygen partial pressure from 0.1333 Pa (1 mTorr) to 133.3 Pa (1 Torr) while the other peak decreased. The GIXRD curve at the optimum condition showed strong two peaks (002) and (103). A strong correlation between the (103) peak intensity and the UV emission intensity was found.

Key words: ZnO, Pulsed laser deposition, Photoluminescence

Young Rae Jang Keon-Ho Yoo Seung Min Park. Properties of ZnO thin films grown on Si (100) substrates by pulsed laser deposition[J]. J. Mater. Sci. Technol., 2010, 26(11): 973-976.

Young Rae Jang Keon-Ho Yoo Seung Min Park. Properties of ZnO Thin Films Grown on Si (100) Substrates by Pulsed Laser Deposition[J]. J Mater Sci Technol, 2010, 26(11): 973-976.

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Properties of ZnO thin films grown on Si (100) substrates by pulsed laser deposition

Properties of ZnO Thin Films Grown on Si (100) Substrates by Pulsed Laser Deposition

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