J. Mater. Sci. Technol. ›› 2007, Vol. 23 ›› Issue (03): 301-303.

• 论文 • 上一篇    下一篇

Investigation of Ge-Si Atomic Interdiffusion in Ge Nano-dots Multilayer Structure by Double Crystal X-ray Diffraction

时文华;薛春来;罗丽萍;王启明   

  1. 中国科学院半导体研究所
  • 收稿日期:2006-06-12 修回日期:2006-09-26 出版日期:2007-05-28 发布日期:2009-10-10
  • 通讯作者: 时文华

Investigation of Ge-Si Atomic Interdiffusion in Ge Nano-dots Multilayer Structure by Double Crystal X-ray Diffraction

Wenhua SHI, Lei ZHAO, Liping LUO, Qiming WANG   

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2006-06-12 Revised:2006-09-26 Online:2007-05-28 Published:2009-10-10
  • Contact: Wenhua SHI

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Abstract: The fluctuations of the strained layer in a superlattice or quantum well can broaden the width of satellite peaks in double crystal X-ray diffraction (DCXRD) pattern. It is found that the width of the 0th peak is directly proportional to the fluctuation of the strained layer if the other related facts are ignored. By this method, the Ge-Si atomic interdiffusion in Ge nano-dots and wetting layers has been investigated by DCXRD. It is found that thermal annealing can activate Ge-Si atomic interdiffusion and the interdiffusion in the nano-dots area is much stronger than that in the wetting layer area. Therefore the fluctuation of the Ge layer decreases and the distribution of Ge atoms becomes homogeneous in the horizontal Ge (GeSi actually) layer, which make the width of the 0th peak narrow after annealing.

Key words: X-ray diffraction, GeSi, Nano-dots, Annealing, Island