J. Mater. Sci. Technol. ›› 2007, Vol. 23 ›› Issue (03): 427-429.

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Quantificational Etching of AAO Template

Guojun SONG, Dong CHEN, Zhi PENG, Xilin SHE, Jianjiang LI, Ping HAN   

  1. 山东省青岛大学化学化工与环境学院
  • 收稿日期:2006-01-13 修回日期:2006-04-14 出版日期:2007-05-28 发布日期:2009-10-10
  • 通讯作者: Chendong

Quantificational Etching of AAO Template

Guojun SONG, Dong CHEN, Zhi PENG, Xilin SHE, Jianjiang LI, Ping HAN   

  1. Institute of Polymer Materials, Qingdao University, Qingdao 266071, China
  • Received:2006-01-13 Revised:2006-04-14 Online:2007-05-28 Published:2009-10-10
  • Contact: Guoqun SONG

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摘要： 采用多孔阳极氧化铝（AAO）作为模板，运用电化学沉积法在模板的微孔中组装金属Ni纳米线，然后用磷铬酸定量蚀刻表层AAO模板，暴露出规整有序、具有可控长度的Ni纳米线阵列。分别用SEM、TEM与SAED对Ni纳米线阵列进行了表征。研究了蚀刻时间与AAO模板质量的减少及暴露出来的Ni纳米线阵列长度之间的关系。结果表明，磷铬酸是较NaOH溶液更为温和有效的AAO模板蚀刻剂，通过控制模板溶解时间，可以实现对裸露于AAO模板外纳米线长度的精细有效控制。该蚀刻方法普遍适用于以AAO为模板所制得的准一维纳米阵列结构。

关键词: 纳米线阵列, AAO, 可控蚀刻, 磷铬酸

Abstract: Ni nanowires were prepared by electrodeposition in porous anodized aluminum oxide (AAO) template from a composite electrolyte solution. Well-ordered Ni nanowire arrays with controllable length were then made by the partial removal of AAO using a mixture of phosphoric acid and chromic acid (6 wt pct H3PO4: 1.8 wt pct H3CrO4). The images of Ni nanowire arrays were studied by scanning electron microscopy (SEM) to determine the relationship between etching time and the length of Ni nanowire arrays. The results indicate that the length of nanowires exposed from the template can be accurately controlled by controlling etching time.

Key words: Nanowire arrays, Anodized aluminum oxide (AAO), Controllable etching