Surface Polishing of 6H-SiC Substrates

J. Mater. Sci. Technol. ›› 2007, Vol. 23 ›› Issue (03): 430-432.

• 论文 • 上一篇

Surface Polishing of 6H-SiC Substrates

陈秀芳

山东大学晶体研究所

收稿日期:2006-05-15 修回日期:2006-08-10 出版日期:2007-05-28 发布日期:2009-10-10
通讯作者: 陈秀芳

Surface polishing of 6H-SiC substrates

Xiufang CHEN, Xiangang XU, Juan LI, Shouzhen JIANG, Lina NING, Yingmin WANG, Deying MA, Xiaobo HU, Minhua JIANG

State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

Received:2006-05-15 Revised:2006-08-10 Online:2007-05-28 Published:2009-10-10
Contact: Xiangang XU

摘要/Abstract

关键词: SiC, CMP, roughness, subsurface, damage

Abstract: The surface polishing for silicon carbide (SiC) substrates was investigated and results were presented for mechanical polishing (MP) and chemo-mechanical polishing (CMP). High quality surfaces were obtained after CMP with colloidal silica. The removal mechanism of scratches in MP and detailed physical and chemical process during CMP were analyzed. The effects of MP and CMP on the surface roughness were assessed by optical microscopy (OM), atomic force microscopy (AFM) and step profilometry. KOH etching and high resolution X-ray diffractometry (HRXRD) were applied to evaluate the subsurface damage of 6H-SiC substrates.

Key words: SiC, Chemo-mechanical polishing (CMP), Roughness, Subsurface damage

陈秀芳. Surface Polishing of 6H-SiC Substrates[J]. J. Mater. Sci. Technol., 2007, 23(03): 430-432.

Xiufang CHEN, Xiangang XU, Juan LI, Shouzhen JIANG, Lina NING, Yingmin WANG, Deying MA, Xiaobo HU, Minhua JIANG. Surface polishing of 6H-SiC substrates[J]. J Mater Sci Technol, 2007, 23(03): 430-432.

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Surface Polishing of 6H-SiC Substrates

Surface polishing of 6H-SiC substrates

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