J. Mater. Sci. Technol. ›› 2010, Vol. 26 ›› Issue (1): 93-96.

• Research Articles • 上一篇    

ZnS衬底上红外透射及保护用射频磁控溅射GaP厚膜的性质Properties of Gallium Phosphide Thick Films Prepared on Zinc Sulfide Substrates by Radio-Frequency Magnetron Sputtering for Infrared Transmission and Protection Purposes

李阳平1;刘正堂2   

  1. 1. 西北工业大学材料学院
    2.
  • 收稿日期:2008-11-03 修回日期:2009-05-13 出版日期:2010-01-31 发布日期:2010-01-22
  • 通讯作者: 李阳平
  • 基金资助:

    航空科学基金;无

Properties of Gallium Phosphide Thick Films Prepared on Zinc Sul-de Substrates by Radio-Frequency Magnetron Sputtering

Yangping Li, Zhengtang Liu   

  1. School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China
  • Received:2008-11-03 Revised:2009-05-13 Online:2010-01-31 Published:2010-01-22
  • Supported by:

    the Aviation Science Foundation of China under grant No. 2008ZE53043

RichHTML

0

PDF (PC)

1343

摘要：

通过在Ar气氛中溅射GaP单晶靶，采用射频磁控溅射法在ZnS衬底上制备GaP厚膜，研究了所制备GaP膜的红外透过性能，结构，形貌及成分等性质。结果表明，所制备的GaP厚膜基本符合化学计量比，厚膜中同时存在着非晶相及闪锌矿结晶相。GaP厚膜具有很好的红外透过性能，尽管相对粗糙的表面及疏松的结构所引起的散射导致了GaP厚膜的红外透过损失。GaP厚膜的硬度比ZnS衬底的要高得多，因此可以给ZnS提供很好的保护。

关键词: 射频磁控溅射, 磷化镓, 厚膜, 红外透过率

Abstract:

Radio-frequency (RF) magnetron sputtering was employed to prepare gallium phosphide (GaP) thick films on zinc sulfide (ZnS) substrates by sputtering a single crystalline GaP target in an Ar atmosphere. The infrared (IR) transmission properties, structure, morphology, composition and hardness of the film were studied. Results show that both amorphous and zinc-blende crystalline phases existed in the GaP film in almost stoichiometric amounts. The GaP film exhibited good IR transmission properties, though the relatively rough surface and loose microstructure caused a small loss of IR transmission due to scattering. The GaP film also showed a much higher hardness than the ZnS substrate, thereby providing good protection to ZnS.

Key words: Radio-frequency magnetron sputtering, Gallium phosphide, Thick film, Infrared transmission

中图分类号: