J. Mater. Sci. Technol. ›› 2012, Vol. 28 ›› Issue (9): 793-798.

• Reviews • 上一篇    下一篇

Effect of deposition temperature on dynamics and mechanism of deposition for Si-B-C ceramic from BCl3/SiCH3Cl3/H2 precursor

Xinzhang Zuo1,Yongsheng liu1,Litong Zhang2,lisiwei1,Laifei Cheng2   

  1. 1. Northwestern Polytechnical university
    2.
  • 收稿日期:2011-09-02 修回日期:2011-11-07 出版日期:2012-09-28 发布日期:2012-09-28
  • 通讯作者: Xinzhang Zuo

Effect of Deposition Temperature on Dynamics and Mechanism of Deposition for Si-B-C Ceramic from BCl3/SiCH3Cl3/H2 Precursor

Xinzhang Zuo, Litong Zhang, Yongsheng Liuy, Siwei Li, Laifei Cheng   

  1. National Key Laboratory of Thermostructure Composite Materials, Northwestern Polytechnical University, Xi'an 710072, China
  • Received:2011-09-02 Revised:2011-11-07 Online:2012-09-28 Published:2012-09-28
  • Contact: Yongsheng Liu

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摘要：

The deposition rate, phase, chemical composition and microstructure of deposits were determined from 950 oC to 1100 oC. With temperature increasing, the deposition rate increases, the morphology changes from smooth to coarse, meanwhile the concentration of silicon increases and boron decreases. The deposition process is controlled by chemical reactions, and the activation energy is 271 kJ/mol. At low temperature (950 oC), the deposition process is dominated by formation of B4C. While at high temperature (above 1000 oC), it is governed by formation of SiC. B4C and SiC disperse uniformly in the Si-B-C co-deposition system and form a dense network structure.

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Abstract:

The deposition rate, phase, chemical composition and microstructure of deposits were determined from 950 to 1100 °C. With increasing temperature, the deposition rate increases, and the morphology changes from smooth to coarse, meanwhile, the concentration of silicon increases while that of boron decreases. The deposition process is controlled by chemical reactions, and the activation energy is 271 kJ/mol. At relatively lower temperature (below 1000 °C), the deposition process is dominated by formation of B4C. While at higher temperature (above 1000 °C), it is governed by formation of SiC. B4C and SiC disperse uniformly in the Si-B-C co-deposition system and form a dense network structure.

Key words: Si-B-C ceramic, Chemical vapor deposition (CVD), Deposition mechanism, Morphology