J. Mater. Sci. Technol. ›› 2010, Vol. 26 ›› Issue (5): 472-476.

• Research Articles • 上一篇    下一篇

Effect of Bi2O3 additive on the microstructure and dielectric properties of BaTiO3-based ceramics sintering at lower temperature

吴顺华1,魏雪松1,高顺起1,王小勇2,杨红星1   

  1. 1. 天津大学
    2. 天津大学电子信息
  • 收稿日期:2009-03-25 修回日期:2009-10-13 出版日期:2010-05-31 发布日期:2010-06-01
  • 通讯作者: 吴顺华
  • 基金资助:

    超高温稳定型BaTiO3复合材料铁电机理研究

Effect of Bi2O3 Additive on the Microstructure and Dielectric Properties of BaTiO3-Based Ceramics Sintered at Lower Temperature

Shunhua Wu, Xuesong Wei, Xiaoyong Wang, Hongxing Yang, Shunqi Gao   

  1. Institute of Electronic and Information Engineering, Tianjin University, Tianjin 300072, China
  • Received:2009-03-25 Revised:2009-10-13 Online:2010-05-31 Published:2010-06-01
  • Contact: wu shunhua
  • Supported by:

    the Tianjin Natural Science Foundation, China (Grant No. 06YFJMJC01000)

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摘要：

High performance X8R dielectric ceramics were prepared by doping Bi2O3 to BaTiO3-based ceramics. The effect of small amounts (≤1.2mol%) of Bi2O3 additive on the microstructure and dielectric properties of BaTiO3-based ceramics have been investigated. The Bi2O3, acting as a sintering additive, can effectively lower the sintering temperature of BaTiO3-based ceramics from 1300℃ to 1130℃. The bulk density of BaTiO3-based ceramics increased and reached the maximum value with increasing Bi2O3 content. The dielectric constant increased with increasing Bi2O3 until it reached the maximum value with 0.8mol% Bi2O3 additive, and the dielectric loss decreased with increasing Bi2O3 content. Optimal dielectric properties of ε=2470, tanδ=0.011 and Δε/ε25≤9% (–55～150℃) were obtained for the BaTiO3-based ceramics doped with 0.8mol% Bi2O3 sintered at 1130℃ for 6 h.

关键词: BaTiO3-based ceramics, Bi2O3, Dielectric properties, X8R

Abstract:

High performance X8R dielectric ceramics were prepared by doping Bi2O3 to BaTiO3-based ceramics. The effect of small amounts (≤1.2 mol%) of Bi2O3 additive on the microstructure and dielectric properties of BaTiO3-based ceramics have been investigated. The Bi2O3, acting as a sintering additive, can effectively lower the sintering temperature of BaTiO3-based ceramics from 1300 to 1130°C. The bulk density of BaTiO3-based ceramics increased and reached the maximum value with increasing Bi2O3 content. The dielectric constant increased with increasing Bi2O3 until it reached the maximum value with 0.8 mol% Bi2O3 additive, and the dielectric loss decreased with increasing Bi2O3 content. Optimal dielectric properties of ε=2470, tanδ=0.011 and Δε/ε25≤±9% (-55-150°C) were obtained for the BaTiO3-based ceramics doped with 0.8 mol% Bi2O3 sintered at 1130°C for 6 h.

Key words: BaTiO3-based ceramics, Bi2O3, Dielectric properties, X8R