Taguchi方法优化LBO晶体化学机械抛光参数Optimization of Polishing Parameters with Taguchi Method for LBO Crystal in CMP

J. Mater. Sci. Technol. ›› 2009, Vol. 25 ›› Issue (05): 703-707.

Taguchi方法优化LBO晶体化学机械抛光参数Optimization of Polishing Parameters with Taguchi Method for LBO Crystal in CMP

李军¹;朱永伟¹;左敦稳¹;朱镛²;陈创天²

1. 南京航空航天大学
2. 中科院理化技术所

收稿日期:2008-05-28 修回日期:2009-03-06 出版日期:2009-09-28 发布日期:2009-10-10
通讯作者: 李军

Optimization of Polishing Parameters with Taguchi Method for LBO Crystal in CMP

Jun Li, Yongwei Zhu, Dunwen Zuo, Yong Zhu, Chuangtian Chen

1) Jiangsu Key Laboratory of Precision and Micro-manufacturing Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China
2) Beijing Center for Crystal Research & Development, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100080, China

Received:2008-05-28 Revised:2009-03-06 Online:2009-09-28 Published:2009-10-10
Contact: LI Jun
Supported by:
the National Natural Science Foundation of China (No. 50675104 and 50905086)
Six High Talent Fund of Jiangsu Province (No. 06-D-024)
Talent Fund of NUAA (No. S0782-052)

摘要/Abstract

关键词: Lithium triborate (LBO) crysta;Material removal rate (MRR);Surface roughness;Taguchi method

Abstract:

Chemical mechanical polishing (CMP) was used to polish Lithium triborate (LiB₃O₅ or LBO) crystal. Taguchi method was applied for optimization of the polishing parameters. Material removal rate (MRR) and surface roughness are considered as criteria for the optimization. The polishing pressure, the abrasive concentration
and the table velocity are important parameters which in°uence MRR and surface roughness in CMP of LBO crystal. Experiment results indicate that for MRR the polishing pressure is the most significant polishing parameter followed by table velocity; while for the surface roughness, the abrasive concentration is the most important one. For high MRR in CMP of LBO crystal the optimal conditions are: pressure 620 g/cm², concentration 5.0 wt pct, and velocity 60 r/min, respectively. For the best surface roughness the optimal conditions are: pressure 416 g/cm², concentration 5.0 wt pct, and velocity 40 r/min, respectively. The contributions of individual parameters for MRR and surface roughness were obtained.

Key words: Chemical mechanical polishing (CMP), Lithium triborate (LBO) crystal, Material removal rate (MRR), Surface roughness, Taguchi method

李军朱永伟左敦稳朱镛陈创天. Taguchi方法优化LBO晶体化学机械抛光参数Optimization of Polishing Parameters with Taguchi Method for LBO Crystal in CMP[J]. J. Mater. Sci. Technol., 2009, 25(05): 703-707.

Jun Li,Yongwei Zhu,Dunwen Zuo,Yong Zhu,Chuangtian Chen. Optimization of Polishing Parameters with Taguchi Method for LBO Crystal in CMP[J]. J Mater Sci Technol, 2009, 25(05): 703-707.

参考文献

[1 ] C.T. Chen, Y.C.Wu, A.D. Jiang, B.C.Wu, G.M. You, R.K. Li and S.J. Lin: J. Opt. Sco. Am., 1989, B6, 616.
[2 ] V.G. Dmitriev, G.G. Gurzadyan and D.N. Niko-gosyan: Handbook of Nonlinear Optical Crystals, 3rd Edn, Springer-Verlag Berlin Heidelberg, Germany, 1999, 68.
[3 ] J.M. Steigerwaid, S.P. Murarka and R.J.Gutmann: Chemical Mechanical Planarization of Microelectronic Materials, John Wiley & Sons, INC.: A Wiley-Interscience Publication, 1997, 4.
[4 ] P.B. Zantye, A. Kumar and A.K. Sikder: Mater. Sci. Eng. R, 2004, 45, 89.
[5 ] Z. Zhong, Z. Wang and Y. Tan: Microelectron. J., 2006, 37(4), 295.
[6 ] Y. Ein-Eli and D. Starosvetsky: Electrochem. Acta, 2007, 52(5), 1825.
[7 ] R.K. Kang, K. Wang, J. Wang and D.M. Guo: Appl. Surf. Sci., 2008, 254, 4856.
[8 ] M. Forsberg: Microelectron. Eng., 2005, 77, 319.
[9 ] N.H. Kim, M.H. Choi, S.Y. Kim and E.G. Chang: Microelectron. Eng., 2006, 83, 506.
[10] I. Zarudi and B.S. Han: J. Mater. Process. Technol., 2003, 140, 641.
[11] F. Preston: J. Soc. Glass Technol., 1927, 11, 214.
[12] W. Cho, Y. Ahn, C.W. Baek and Y.K. Kim: Micro-electron. Eng., 2003, 65, 13.
[13] Z. Stavreva, D. Zeidler, M. Pl膐tner and K. Drescher: Microelectron. Eng., 1997, 37-38, 143.
[14] S. Park, C. Kim, S. Kim and Y. J. Seo: Microelectron. Eng., 2003, 66, 488.
[15] C.X. Feng and X. Wang: Int. J. Adv. Manuf. Technol., 2002, 20, 348.
[16] Z. Lin and C. Liu: Int. J. Adv. Manuf. Technol., 2001, 18, 20.
[17] Z. Lin and C. Ho: Int. J. Adv. Manuf. Technol., 2003, 21, 10.
[18] M. Jiang, N.O. Wood and R. Komanduri: Wear, 1998, 220, 59.
[19] W.H. Yang and Y.S. Tarng: J. Mater. Process. Technol., 1998, 84, 122.
[20] K.Y. Chang, Y.H. Song and T.R. Lin: Int. J. Adv. Manuf. Technol., 2002, 20, 414.
[21] T.R. Lin: Int. J. Adv. Manuf. Technol., 2003, 22, 237.
[22] J.A. Ghani, I.A. Choudhury and H.H. Hassan: J. Mater. Process. Technol, 2004, 145, 84.
[23] M.F. Huang, T.R. Lin and H.C. Chiu: Int. J. Adv. Manuf. Technol., 2005, 26, 999.
[24] P.H. Chen, C. Yau, K.Y. Wu, S. Lin and H.C. Shih: Microelectron. Eng., 2005, 77, 110.
[25] H.W. Sun, J.Q. Liu, D. Chen and P. Gu: Microelectron. Eng., 2005, 82, 175.
[26] H. Oktem, T. Erzurumlu and M. Col: Int. J. Adv. Manuf. Technol., 2006, 28, 694.