J. Mater. Sci. Technol. ›› 2009, Vol. 25 ›› Issue (02): 233-236.

• Articles • 上一篇    下一篇

Study on La-doped copper nitride films prepared by reactive magnetron sputtering

李兴鳌1;刘祖黎2;左安友2;袁作彬2;杨建平2;姚凯伦2   

  1. 1. 华中科技大学物理系；湖北民族学院物理系
    2.
  • 收稿日期:2007-10-09 修回日期:2008-04-15 出版日期:2009-03-28 发布日期:2009-10-10
  • 通讯作者: 李兴鳌

La-doped Copper Nitride Films Prepared by Reactive Magnetron Sputtering

Xing'ao Li1,2)†, Jianping Yang1,2), Anyou Zuo1), Zuobin Yuan1), Zuli Liu3)
and Kailun Yao3,4)   

  1. 1) College of Mathematic and Physics, Nanjing University of Posts and Telecommunications, Nanjing 210003, China
    2) School of Science, Hubei Institute for Nationalities, Enshi 445000, China
    3) Department of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
    4) International Center of Material Physics, Chinese Academy of Science, Shenyang 110016, China
  • Received:2007-10-09 Revised:2008-04-15 Online:2009-03-28 Published:2009-10-10
  • Contact: Xing'ao Li
  • Supported by:

    the National Natural Science Foundation of China under grant No. 10574047
    the Key Program of the Education Branch of Hubei Province of China under grant No. D200529002
    the Key Program of the Ethnic Affairs Committee of China under grant No. 08HB05
    the Scientific Research Foundation of Nanjing University of Post Telecommunication under grant No. NY208025.

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摘要：

用反应磁控溅射法在玻璃基底上制备了氮化铜薄膜和镧掺杂氮化铜薄膜，X射线衍射显示氮化铜薄膜由Cu3N晶体组成，且呈[111]晶向择优生长；XRD测量还显示镧掺杂氮化铜薄膜的晶体生长强烈的依赖于镧的含量， [111]晶向的衍射峰随着镧含量的增加而减弱，且高的镧含量会阻止晶体的生长；镧掺杂氮化铜薄膜的电阻率比氮化铜薄膜的电阻率要低，且随着镧含量的增加而降低。

关键词: 氮化铜薄膜;镧掺杂氮化铜薄膜;磁控溅射;晶体结构

Abstract:

Copper nitride film (Cu3N) and La-doped copper nitride films (LaxCu3N) were prepared on glass substrates by reactive magnetron sputtering of a pure Cu and a pure La targets under N2 atmosphere. The results show that La-free film was composed of Cu3N crystallites with anti-ReO3 structure with (111) texture. The formation of the LaxCu3N films is affected strongly by La, and the peak intensity of the preferred crystalline [111]-orientation decreases with increasing the concentration of La. High concentration of La may prevent the formation of the Cu3N from crystallization. Compared with the Cu3N films, the resistivity of the LaxCu3N films have been decreased.

Key words: Copper nitride film, La-doped copper nitride films, Magnetron sputtering, Crystal structure