J. Mater. Sci. Technol. ›› 2009, Vol. 25 ›› Issue (01): 85-89.

• Letters • 上一篇    下一篇

Metal Organic Chemical Vapour Deposited Thin Films of Cobalt Oxide Prepared via Cobalt Acetylacetonate

C.U. Mordi1), M.A. Eleruja1), B.A. Taleatu1), G.O. Egharevba2), A.V. Adedeji3),O.O. Akinwunmi1), B. Olofinjana1), C. Jeynes4) and E.O.B. Ajayi1)†   

  1. 1) Department of Physics; Obafemi Awolowo University; Ile-Ife; Nigeria
    2) Department of Chemistry; Obafemi Awolowo University; Ile-Ife; Nigeria
    3) Department of Physics; Auburn University; Alabama; United States
    4) Department of Electronics and Electrical Engineering; University of Surrey Guildford; Surrey GU2 7XH; UK
    [
  • 收稿日期:2007-12-10 修回日期:2008-09-29 出版日期:2009-01-28 发布日期:2009-10-10
  • 通讯作者: E.O.B. Ajayi

Metal Organic Chemical Vapour Deposited Thin Films of Cobalt Oxide Prepared via Cobalt Acetylacetonate

C.U. Mordi1), M.A. Eleruja1), B.A. Taleatu1), G.O. Egharevba2), A.V. Adedeji3),O.O. Akinwunmi1), B. Olofinjana1), C. Jeynes4) and E.O.B. Ajayi1)†   

  1. 1) Department of Physics, Obafemi Awolowo University, Ile-Ife, Nigeria
    2) Department of Chemistry, Obafemi Awolowo University, Ile-Ife, Nigeria
    3) Department of Physics, Auburn University, Alabama, United States
    4) Department of Electronics and Electrical Engineering, University of Surrey Guildford, Surrey GU2 7XH, UK
    [
  • Received:2007-12-10 Revised:2008-09-29 Online:2009-01-28 Published:2009-10-10
  • Contact: E.O.B. Ajayi

Abstract:

The single solid source precursor, cobalt (II) acetylacetonate was prepared and characterized by infrared spec- troscopy. Thin films of cobalt oxide were deposited on soda lime glass substrates through the pyrolysis (metal organic chemical vapour deposition (MOCVD)) of single solid source precursor, cobalt acetylaceto- nate, Co[C5H7O2]2 at a temperature of 420°C. The compositional characterization carried out by rutherford backscattering spectroscopy and X-ray diffraction (XRD), showed that the films have a stoichiometry of Co2O3 and an average thickness of 227±0.2 nm. A direct energy gap of 2.15±0.01 eV was calculated by the data obtained by optical absorption spectroscopy. The morphology of the films obtained by scanning electron mi- croscopy, showed that the grains were continuous and uniformly distributed at various magnifications, while the average grain size was less than 1 micron for the deposited thin films of cobalt oxide.

Key words: Precursor, Thin film, Oxide, Metal organic chemical vapour deposition(MOCVD), Rutherford backscattering spectroscopy (RBS)