J. Mater. Sci. Technol. ›› 2009, Vol. 25 ›› Issue (01): 135-140.
S.K. Sadrnezhaad
S.K. Sadrnezhaad1;2)†, E. Rezvani1), S. Sanjabi1;3) and A.A. Ziaei Moayed2)
摘要:
Local annealing of amorphous NiTi thin films was performed by using an Nd:YAG 1064 nm wavelength pulsed laser beam. Raw samples produced by simultaneous sputter deposition from elemental Ni and Ti targets onto unheated Si (100) and Silica (111) substrates were used for annealing. Delicate treatment with 15.92 W/mm2 power density resulted in crystallization of small spots; while 16.52 and 17.51 W/mm2 power densities caused ablation of the amorphous layer. Optical microscopy, scanning electron microscopy, X-ray diffraction and atomic force microscopy were performed to characterize the microstructure and surface morphology of the amorphous/crystallized spot patterns.