J. Mater. Sci. Technol. ›› 2007, Vol. 23 ›› Issue (04): 487-490.

• 论文 • 上一篇    下一篇

Interfacial Bonding Strength of TiN Film Coated on Si3N4 Ceramic Substrate

孔德军   

  1. School of Mechanical Engineering; Jiangsu University
  • 收稿日期:2006-12-05 修回日期:2007-04-02 出版日期:2007-07-28 发布日期:2009-10-10
  • 通讯作者: 孔德军

Interfacial Bonding Strength of TiN Film Coated on Si3N4 Ceramic Substrate

Dejun KONG, Yongkang ZHANG, Zhigang CHEN, Jinzhong LU   

  1. Jiangsu Key Laboratory of Oil & Gas Storage and Transportation Technology, Jiangsu Polytechnic University, Changzhou 213016, China...
  • Received:2006-12-05 Revised:2007-04-02 Online:2007-07-28 Published:2009-10-10
  • Contact: Dejun KONG

关键词: Residual, stress

Abstract: The fraction of TiN/Si3N4 in the cross section was observed with scanning electric microscope (SEM), and residual stresses of TiN coated on the surface of Si3N4 ceramic were measured with X-ray diffraction (XRD). The hardness of TiN film was measured, and bonding strength of TiN film coated on Si3N4 substrate was measured by scratching method. The formed mechanism of residual stress and the failure mechanism of the bonding interface in the film were analyzed, and the adhesion mechanism of TiN film was investigated preliminarily. The results show that residual stresses of TiN film are all behaved as compressive stress, and TiN film is represented smoothly with brittle fracture, which is closely bonded with Si3N4 substrate. TiN film has high hardness and bonding strength of about 500 MPa, which could satisfy usage requests of the surface of cutting Si3N4 ceramic.

Key words: TiN film, Bonding strength, XRD, Residual stress