J. Mater. Sci. Technol. ›› 2006, Vol. 22 ›› Issue (03): 333-335.

• 论文 • 上一篇    下一篇

Comparison of ZnO Films Grown on before- and after-vapor Transport Equilibration (VTE) LiAlO2 Substrates by Pulsed Laser Deposition (PLD)

邹军;周圣明   

  1. 上海光机所
  • 收稿日期:2005-07-07 修回日期:2005-10-14 出版日期:2006-05-28 发布日期:2009-10-10
  • 通讯作者: 邹军

Comparison of ZnO Films Grown on before- and after-vapor Transport Equilibration (VTE) LiAlO2 Substrates by Pulsed Laser Deposition (PLD)

Jun ZOU, Shengming ZHOU, Jun XU   

  1. Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China...
  • Received:2005-07-07 Revised:2005-10-14 Online:2006-05-28 Published:2009-10-10
  • Contact: Jun ZOU

RichHTML

0

PDF (PC)

948

Abstract: About Φ45 mm LiAlO2 single crystal was grown by Czochralski (Cz) technique. However, the full-width at half-maximum (FWHM) value was high to 116.9 arcsec. After three vapor transport equilibration (VTE) processes, we can obtain high-quality LiAlO2 slice with the FWHM value of 44.2 arcsec. ZnO films were fabricated on as-grown slices and after-VTE ones by pulsed laser deposition (PLD). It was found that ZnO films on the two slices have similar crystallinity, optical transmittance and optical band gap at room temperature. These results not only show that LAO substrate is suitable for ZnO growth, but also prove that the crystal quality of LAO substrate slightly affects the structural and optical properties of ZnO film.

Key words: Crystal structure, Pulsed laser deposition, ZnO films, Vapor transport equilibration (VTE)