J. Mater. Sci. Technol. ›› 1997, Vol. 13 ›› Issue (6): 499-502.

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Auger Depth Profiling of Carbonized SiC/Si Samples

Shahzad Naseem and Shazia Yasin(Centre for Solid State Pliysics, University of the Punjab, Quaid-e-Azam Campus, Lahore-54590, Pakistan)   

  • 收稿日期:1997-11-28 修回日期:1997-11-28 出版日期:1997-11-28 发布日期:2009-10-10

Auger Depth Profiling of Carbonized SiC/Si Samples

Shahzad Naseem and Shazia Yasin(Centre for Solid State Pliysics, University of the Punjab, Quaid-e-Azam Campus, Lahore-54590, Pakistan)   

  • Received:1997-11-28 Revised:1997-11-28 Online:1997-11-28 Published:2009-10-10

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摘要： 1.IlltroductionSiliconcarbide(SiC)thinfilmshavethecharacter-isticofwidebandgap,chemicalinertness,highwearresistance,superiorthermalstabilityandlargeneg-ativetemperaturecoefficient.Theyhavebeenusedinvariousapplications,suchasamorphoussiliconscrlarcells,surfacecoatings,sourceofbluelightandth...i.tors[1~4].Anewtypeofhighefficiencysolarcellhasbeende-velopedbyaproductionprocesswithchemicalvapourde....

Abstract: Silicon carbide (SiC) has been prepared by passing natural gas over (100) oriented hot Si substrate at different temperatures in the range 930~1000℃. Reaction times of 60 and 90 min are used.Depth profile, using Auger Electron Spectroscopy, shows the formation of SiC under a thin coating of carbon for the samples prepared at 930 and 950℃. Annealing, at 1050℃ for 12 h,results in a more pronounced formation of SiC. It is found that at the temperature of 1000℃and reaction times of 60 and 90 min, a hard diamond-like coating is formed.