J. Mater. Sci. Technol. ›› 1997, Vol. 13 ›› Issue (2): 154-156.

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Influence of Experimental Parameters on Reactive Magnetron Sputtering CN_x Thin Films

Weitao ZHENG ; Tao DING (Dept. of Materials Science, Jilin University, Changchun 130023, China)I.Ivanov ; J.-E Sundgren (Dept. of Physics, Linkoping University, S-581 83 Linkoping, Sweden)   

  • 收稿日期:1997-03-28 修回日期:1997-03-28 出版日期:1997-03-28 发布日期:2009-10-10

Influence of Experimental Parameters on Reactive Magnetron Sputtering CN_x Thin Films

Weitao ZHENG ; Tao DING (Dept. of Materials Science, Jilin University, Changchun 130023, China)I.Ivanov ; J.-E Sundgren (Dept. of Physics, Linkoping University, S-581 83 Linkoping, Sweden)   

  • Received:1997-03-28 Revised:1997-03-28 Online:1997-03-28 Published:2009-10-10

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摘要： ResearchoncarbonnitridethinfilInswasprimar-ilydrivenbythepos8ibilitytosyllthesisethesuper-hard0-CsN`phasetheoreticallypredictedbyLiuetal.[1].Thecalculatedbondlengthandlowion-icitysuggestedthatitsbulkmodulusandhardnesswouldbeclosetothoseofdiam0nd.ManygroupshavealsotriedtodepositcarbonnitridethinfilmsusingdmerenttecbJilquesl2~101.Althoughafewev-idencesontheetotenceofthe0-C3N4phasehavebeengivenl....

Abstract: Carbon nitride thin films were deposited on Si(001) using unbalanced magnetron sputtering at different experimental parameters. The effects of nitrogen partial pressure, substrate temperature and substrate bias on the deposition rate and nitrogen content are discussed.