Modes of grain growth and mechanism of dislocation reaction under applied biaxial strain: Atomistic and continuum modeling

Ying-Jun Gao^a^,^*(

), Qian-Qian Deng^a, Zhe-yuan Liu^a, Zong-Ji Huang^a, Yi-Xuan Li^a, Zhi-Rong Luo^a^,^b

Fig. 3.. (a) The GB dislocation arrangement and the orientation of bicrystals. (b) The exploded view of the GB dislocation configuration : Each GB consists of three sets of dislocations (b₂,b₃,b₄) or (b₅,b₆,b₁), in which all dislocations are paired and arranged in a staggered arrangement; (c) The schematic of the arrangement and configuration of edge dislocation ({b_i}) in the GB. Inset: the configuration of the GB dislocation pair B_i=b_i+b_i+1 is regarded as a combination of two Burgers vectors b_i (partial dislocation). In the inset the dislocation b₃ and b₆ of the excess atomic plane along the grain boundary direction reflect the misorientation angle characteristic of the small angle STGB. (d) Free energy curve of the system vs time steps under the strain.