Resistive switching performance improvement of InGaZnO-based memory device by nitrogen plasma treatment

Li Zhang^a^,^c, Zhong Xu^a, Jia Han^a, Lei Liu^a, Cong Ye^a^,^*(

), Yi Zhou^a, Wen Xiong^a, Yanxin Liu^a, Gang He^b^,^*(

)

Fig. 6.. Current conduction mechanism of the (a) Pt/IGZO/TiN and (b) Pt/IGZO/IGZO:N/TiN device. Figures (c)-(d) and (e)-(f) exhibit the coincidence of current fitting analysis for both devices, respectively.