Resistive switching performance improvement of InGaZnO-based memory device by nitrogen plasma treatment
Li Zhanga,c, Zhong Xua, Jia Hana, Lei Liua, Cong Yea,*(
), Yi Zhoua, Wen Xionga, Yanxin Liua, Gang Heb,*()
), Yi Zhoua, Wen Xionga, Yanxin Liua, Gang Heb,*()
.
Fig. 5.. Pulse endurance characteristics of (a) Pt/IGZO/TiN and (b) Pt/IGZO/IGZO:N/TiN device, the inset plots the pulse parameters. Retention characteristics of (c) Pt/IGZO/TiN and (d) Pt/IGZO/IGZO:N/TiN device at 125 ℃.
