Resistive switching performance improvement of InGaZnO-based memory device by nitrogen plasma treatment
Li Zhanga,c, Zhong Xua, Jia Hana, Lei Liua, Cong Yea,*(), Yi Zhoua, Wen Xionga, Yanxin Liua, Gang Heb,*()

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Fig. 3.. (a) Semilog image of forming process and (b) forming voltage variations for two devices. Typical I-V curves with 100 cycles for (c) Pt/IGZO/TiN and (d) Pt/IGZO/IGZO:N/TiN device.