Resistive switching performance improvement of InGaZnO-based memory device by nitrogen plasma treatment

Li Zhang^a^,^c, Zhong Xu^a, Jia Han^a, Lei Liu^a, Cong Ye^a^,^*(

), Yi Zhou^a, Wen Xiong^a, Yanxin Liu^a, Gang He^b^,^*(

)

Fig. 1.. 3D topographic images of the film surface of (a) IGZO film and (b) IGZO:N film.