Short-Term Synaptic Plasticity Mimicked on Ionic/Electronic Hybrid Oxide Synaptic Transistor Gated by Nanogranular SiO<sub>2</sub> Films

Short-Term Synaptic Plasticity Mimicked on Ionic/Electronic Hybrid Oxide Synaptic Transistor Gated by Nanogranular SiO₂ Films

Zhaojun Guo^1,², Liqiang Guo², Liqiang Zhu^2,^*, Yuejin Zhu¹

Fig. 3 IZO transistors response to programming pulses. The channel current is read out by applying a read pulse 0.05 V, 50 ms with a constant V ds of 0.5 V. a Current lower curve is progressively increased by applying a series of positive programming pulses with amplitude of 1 V upper curve. b Current lower curve is progressively decreased by applying a series of negative programming pulses with amplitude of #cod#x02212;0.5 V upper curve. c The channel current can be progressively increased or decreased by consecutive positive P: 1 V, 30 ms or negative D: #cod#x02212;0.5 V, 30 ms programming pulses.