Short-Term Synaptic Plasticity Mimicked on Ionic/Electronic Hybrid Oxide Synaptic Transistor Gated by Nanogranular SiO<sub>2</sub> Films

Short-Term Synaptic Plasticity Mimicked on Ionic/Electronic Hybrid Oxide Synaptic Transistor Gated by Nanogranular SiO₂ Films

Zhaojun Guo^1,², Liqiang Guo², Liqiang Zhu^2,^*, Yuejin Zhu¹

Fig. 2 IZO channel current as a function of time after applying a read pulse 0.05 V, 50 ms and a single programming pulse with a constant V ds of 0.5 V: a A positive programming pulse of 1 V in amplitude and 30 ms in duration; b A negative programming pulse of #cod#x02212;0.5 V in amplitude and 30 ms in duration.