Thermal Stability of ALD Lanthanum Aluminate Thin Films on Si (100)
She Xiaofeng, Wang Hongtao*
Fig. 2. a Cross-sectional TEM image of Al 2 O 3 Si sample after annealing at 450 °C; Cross-sectional TEM images of Al 2 O 3 Si samples after annealing at b 600 °C and c 900 °C.