Thermal Stability of ALD Lanthanum Aluminate Thin Films on Si (100) |
Fig. 1. a Cross-sectional TEM image of an as-deposited La 1.1 Al 0.9 O 3 film on Si; Cross-sectional TEM images of La 1.1 A 0.9 O 3 films on Si 100 substrates after annealing for 1 min at b 600 °C, c 700 °C and d 800 °C. |
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