Tungsten Doped Indium Oxide Thin Films Deposited at Room Temperature by Radio Frequency Magnetron Sputtering

Pan Jiaojiao, Wang Wenwen^*, Wu Dongqi, Fu Qiang, Ma Ding

Fig. 4. a Optical transmittance spectra of the IWO films prepared with different sputtering power and the same deposition time of 25 min, b optical transmittance spectra of the IWO films deposited with different thickness and the same sputtering power of 60 W.