Tungsten Doped Indium Oxide Thin Films Deposited at Room Temperature by Radio Frequency Magnetron Sputtering

Pan Jiaojiao, Wang Wenwen^*, Wu Dongqi, Fu Qiang, Ma Ding

Fig. 2. SEM images of IWO thin films deposited at room temperature with different sputtering power of 40 W a, 50 W b, 80 W c, 90 W d and the same deposition time of 25 min.